DocumentCode
3493509
Title
Assessment of the Impact of Biaxial Strain on the Drain Current of Decanometric n-MOSFET
Author
Ponton, D. ; Lucci, L. ; Palestri, P. ; Esseni, D. ; Selmi, L.
Author_Institution
DIEGM, Udine Univ.
fYear
2006
fDate
19-21 Sept. 2006
Firstpage
166
Lastpage
169
Abstract
In this paper, the authors use multi-subband-Monte-Carlo simulations to investigate the on-current increment induced by biaxial strain in n-MOSFETs featuring bulk and double-gate architecture with 25nm gate length. The effect of different scattering mechanisms and of the subband structure is analyzed in detail
Keywords
MOSFET; Monte Carlo methods; semiconductor device models; 25 nm; biaxial strain impact; bulk architecture; decanometric n-MOSFET; double-gate architecture; drain current; multi-subband-Monte-Carlo simulation; on-current increment; scattering mechanisms; subband structure; Acoustic scattering; Calibration; Capacitive sensors; Germanium silicon alloys; MOSFET circuits; Optical scattering; Silicon germanium; Stress; Strontium; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location
Montreux
ISSN
1930-8876
Print_ISBN
1-4244-0301-4
Type
conf
DOI
10.1109/ESSDER.2006.307664
Filename
4099882
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