Title :
Thermal resistance calculation of AlGaN/GaN on SiC devices
Author :
Darwish, Ali M. ; Bayba, Andrew ; Hung, H. Alfred
Author_Institution :
Army Res. Lab., Adelphi, MD, USA
Abstract :
We present an original, accurate, closed-form expression for the thermal resistance of multifingers AlGaN/GaN on SiC FET devices. The model takes into account the thickness of GaN and SiC layers, the gate pitch, length, and width. The model´s validity is verified by comparing it with the results of numerical simulations for many different devices. Very close (1-2%) agreement is observed in general. The model is also compared with experimental observations.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; semiconductor device models; silicon compounds; temperature distribution; thermal resistance measurement; wide band gap semiconductors; AlGaN-GaN; GaN thickness; SiC; SiC FET devices; SiC layers; closed form expression; gate pitch; multifingers; numerical simulations; thermal resistance calculation; Aluminum gallium nitride; FETs; Fingers; Gallium nitride; Isothermal processes; Numerical simulation; Silicon carbide; Temperature; Thermal management; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1339014
