Title :
Beam-lead partially-depleted-absorber photodiode
Author :
Chizh, A. ; Malyshev, S. ; Tepteev, A. ; Andrievski, V. ; Guszhinskaya, E. ; Romanova, L.
Author_Institution :
Lab. of Semicond. Optoelectron., Stepanov Inst. of Phys., Minsk, Belarus
Abstract :
A new high-speed high-power photodiode design based on beam-lead technology to reduce thermal resistance and series contact resistance, which limit the saturation photocurrent of photodiodes with small active area, has been presented.
Keywords :
beam-lead devices; contact resistance; photodiodes; thermal resistance; beam-lead partially-depleted-absorber photodiode; high-speed high-power photodiode design; series contact resistance; thermal resistance; Absorption; Indium gallium arsenide; Indium phosphide; Inductance; Photodiodes; Thermal resistance; InGaAs; beam lead; high-speed high-power photodiode;
Conference_Titel :
Microwave Photonics (MWP), 2012 International Topical Meeting on
Conference_Location :
Noordwijk
Print_ISBN :
978-1-4673-2863-0
DOI :
10.1109/MWP.2012.6474106
