Room temperature electroluminescence at 1.3 μm from strained InAs/GaAs quantum dots

Summary form only given. Strong room temperature photoluminescence (PL) centered at 1.30 μm with linewidth 21 meV has been achieved in bilayer stacks of InAs island quantum dots (QDs) on GaAs (001) utilizing the variable deposition amount (VDA) approach in molecular beam epitaxy. In VDA, the first layer deposition conditions control the density of vertically correlated island stacks formed upon subsequent deposition of a second layer whose deposition amount controls the average island size and size distribution in the second layer. This affords independent control on the QD density and size in the second layer QDs, thus allowing luminescence at longer wavelengths through creation of coherent larger size QDs. We have examined the PL, electroluminescence (EL) and structural characteristics of this class of structures for their potential use in light emitting diodes and lasers