Title :
High characteristic temperature (T0>150 K) 1.2 μm GaInAs/GaAs lasers
Author :
Iga, K. ; Koyama, F. ; Miyamoto, T. ; Schlenker, D. ; Chen, Z.
Author_Institution :
Tokyo Inst. of Technol., Japan
Abstract :
Summary form only given. Long wavelength VCSELs are crucial for single mode silica-fiber data transmission with link lengths of several km and high data rates beyond several Gbits/s. This simple data link will avoid modal dispersion and noise in existing multi-mode LAN systems. High performance GaInAs-GaAs edge emitting lasers have been demonstrated. Recently, our group and Sato of Ricoh independently demonstrated low threshold current density operations of highly strained GaInAs-GaAs QW lasers emitting at nearly 1.2 μm wavelength. We achieved a record characteristic temperature as high as 150 K. We also realized uncooled CW operations and carried out single mode fiber data transmission. In this paper, we review our latest results on 1.2 μm GaInAs-GaAs lasers and discuss their applicability to data coms
Keywords :
Debye temperature; III-V semiconductors; gallium arsenide; indium compounds; laser transitions; optical fibre LAN; optical transmitters; quantum well lasers; 1.2 mum; 150 K; GaInAs-GaAs; GaInAs/GaAs lasers; Sato of Ricoh; data coms; data link; high characteristic temperature; high data rates; high performance GaInAs-GaAs edge emitting lasers; highly strained GaInAs-GaAs QW lasers; link lengths; long wavelength VCSELs; low threshold current density operations; modal dispersion; multi-mode LAN systems; single mode fiber data transmission; single mode silica-fiber data transmission; uncooled CW operations; Data communication; Fiber lasers; Gallium arsenide; Laser modes; Laser noise; Optical fiber LAN; Temperature; Threshold current; Vertical cavity surface emitting lasers; Waveguide lasers;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.813605
