Title :
Optimal Design for Carbon Nanotube Transistors
Author :
Pourfath, M. ; Kosina, H. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien
Abstract :
A numerical study of carbon nanotube field effect transistors is presented. To investigate transport phenomena in such devices the non-equilibrium Green´s function formalism was employed. Phenomena like tunneling and electron-phonon interactions are rigorously taken into account. The effect of geometrical parameters on the device performance was studied. Our results clearly show that device characteristics can be optimized by appropriately selecting geometrical parameters
Keywords :
Green´s function methods; carbon nanotubes; electron-phonon interactions; field effect transistors; semiconductor device models; transport processes; tunnelling; carbon nanotube field effect transistors; electron-phonon interactions; geometrical parameter effect; nonequilibrium Green function; transport phenomena; tunneling; CNTFETs; Carbon nanotubes; Charge carrier processes; FETs; Green´s function methods; Microelectronics; Particle scattering; Photonic band gap; Semiconductivity; Tunneling;
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0301-4
DOI :
10.1109/ESSDER.2006.307675
