Title :
Electrical properties of MIS diodes with insulating Langmuir-Blodgett thin films
Author :
Kaneko, Futao ; Shibata, Masaaki ; Kobayashi, Satoshi
Author_Institution :
Niigata Univ., Japan
Abstract :
Electrical properties are investigated for metal-insulator-semiconductor diodes having Langmuir-Blodgett polydiacetylene (LB PDA) thin films. Capacitance-voltage characteristics measured for the Al-LB PDA-Si (MIS) diodes show reasonable capacitances for the accumulation. The C-V curves show hysteresis, and flatband voltage shifts are observed under the application of bias voltages. These results show charge injection from Si in the MIS diodes. Thermally stimulated currents (TSCs) are measured for Al-LB PDA-Al metal-insulator-metal structures. TSC peaks caused by dipole polarization and charge injection are observed in the low- and high-temperature regions respectively
Keywords :
Langmuir-Blodgett films; aluminium; capacitance; dielectric polarisation; metal-insulator-semiconductor devices; polymer films; semiconductor diodes; silicon; thermally stimulated currents; Al-Si; C-V curves; Langmuir-Blodgett polydiacetylene films; MIS diodes; charge injection; dipole polarisation; flatband voltage shifts; hysteresis; metal-insulator-metal structures; thermally stimulated currents; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Dielectrics and electrical insulation; Diodes; Hysteresis; Metal-insulator structures; Polarization; Transistors; Voltage;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1988. Annual Report., Conference on
Conference_Location :
Ottawa, Ont.
DOI :
10.1109/CEIDP.1988.26336
