DocumentCode :
3493763
Title :
Combinatorial algorithms for BJT model parameter extraction
Author :
Wang, H. ; Yang, H.Z. ; Hu, G.Z.
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
fYear :
1996
fDate :
26-28 Nov 1996
Firstpage :
144
Lastpage :
147
Abstract :
This paper presents some combinatorial algorithms for global optimization problems, which can be applied to solve model parameter extraction in bipolar junction transistors (BJT). The main advantage of combinatorial algorithms to a traditional algorithm like Gauss-Newton method, lies in that it needs no computation of the gradient of the objective function. Moreover, the global optimality of these approach is also better than Gauss-Newton method. As the selection of the initial point and iterative strategies proposed in this paper are based on a global search, the combinatorial algorithms are more simple, efficient, and suitable for global optimization. Examples are given to demonstrate the validity and efficiency of the proposed approach
Keywords :
bipolar transistors; combinatorial mathematics; iterative methods; minimisation; parameter estimation; semiconductor device models; BJT model parameter extraction; bipolar junction transistors; combinatorial algorithms; global optimization; global search; initial point selection; iterative strategies; orthogonal design; Circuit simulation; Computational modeling; Computer simulation; Iterative algorithms; Least squares methods; Mathematics; Newton method; Parameter extraction; Recursive estimation; Simulated annealing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location :
Penang
Print_ISBN :
0-7803-3388-8
Type :
conf
DOI :
10.1109/SMELEC.1996.616471
Filename :
616471
Link To Document :
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