A Novel Channel-Program-Erase Technique with Substrate Transient Hot Carrier Injection for SONOS Memory Application

Author

Hsu, Tzu-Hsuan ; Wu, Jau-Yi ; Ya Chin King ; Hang Ting Lue ; Yen Hao Shih ; Lai, Erh-Kun ; Hsieh, Kuang-Yeu ; Liu, Rich ; Lu, Chih-Yuan

Author_Institution

Emerging Central Lab., Macronix Int. Co. Ltd., Hsinchu

fYear

2006

fDate

19-21 Sept. 2006

Firstpage

222

Lastpage

225

Abstract

A novel and uniform channel program and erase method is presented to replace the FN tunneling operation for SONOS cells in NAND architecture. The proposed operation utilizes substrate transient hot electron (STHE) injection and substrate transient hot hole (STHH) injection for programming and erasing, respectively. Gate bias polarity can control whether hot electrons or hot holes are injected into the nitride storage layer. More efficient program and erase operation is achieved compared to conventional Fowler-Nordheim (FN) tunneling method. The new method operates at lower programming voltage and shorter pulse, thus increases the programming throughput. Good cycling endurance and data retention are obtained for SONOS memory applications

Keywords

NAND circuits; charge injection; hot carriers; integrated memory circuits; substrates; tunnelling; Fowler-Nordheim tunneling; NAND architecture; SONOS memory; channel-program-erase technique; data retention; substrate transient hot carrier injection; substrate transient hot hole injection; Charge carrier processes; Dielectric substrates; Fabrication; Flash memory; Hot carrier injection; Hot carriers; SONOS devices; Substrate hot electron injection; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Conference_Location

Montreux

ISSN

1930-8876

Print_ISBN

1-4244-0301-4

Type

conf

DOI

10.1109/ESSDER.2006.307678

Filename

4099896