In-depth Investigation of HfAlO Layers as Interpoly Dielectrics of Future Flash Memories

Author

Molas, G. ; Grampeix, H. ; Buckley, J. ; Bocquet, M. ; Garros, X. ; Martin, F. ; Colonna, J.P. ; Brianceau, P. ; Vidal, V. ; Gély, M. ; De Salvo, B. ; Deleonibus, S. ; Bongiorno, C. ; Lombardo, S.

Author_Institution

CEA-Leti, Grenoble

fYear

2006

fDate

Sept. 2006

Firstpage

242

Lastpage

245

Abstract

In this work, the authors evaluate the potentialities of HfAlO materials as possible candidates for the interpoly dielectrics of future flash memory devices. HfAlO single-layer and oxide/HfAlO/oxide triple-layer stacks were processed and analyzed in terms of coupling and insulating capabilities. The electron conduction modes in these materials, at different temperatures, were also investigated. Finally, by means of analytical models matched with experimental data, the authors extrapolate the programming characteristics of future flash memory nodes integrating HfAlO as interpoly dielectrics

Keywords

aluminium compounds; dielectric materials; flash memories; hafnium compounds; insulating materials; HfAlO; coupling capabilities; electron conduction modes; future flash memories; insulating capabilities; interpoly dielectrics; programming characteristics; triple-layer stacks; Analytical models; Capacitors; Conducting materials; Dielectric devices; Dielectric materials; Electrons; Flash memory; Hafnium; High K dielectric materials; High-K gate dielectrics;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Conference_Location

Montreux

ISSN

1930-8876

Print_ISBN

1-4244-0301-4

Type

conf

DOI

10.1109/ESSDER.2006.307683

Filename

4099901