Title :
Evaluation of the degradation of floating-gate memories with Al2O3 tunnel oxide
Author :
Buckley, J. ; Molas, G. ; Gély, M. ; Martin, F. ; De Salvo, B. ; Deleonibus, S. ; Pananakakis, G. ; Bongiorno, C. ; Lombardo, S.
Author_Institution :
CEA-LETI, Grenoble
Abstract :
Replacing the tunnel oxide of non-volatile memories by a high-k dielectric is addressed in this paper. This work reports in its first part an experimental study of conduction and trapping in Al2O 3 layers. The experimental data of these layers is then integrated in a novel endurance model suitable for flash memories with high-k tunnel oxide. Simulation results show that low (+8/-7V) operating voltages can be used to obtain large threshold voltage shifts, and despite a great amount of trapped negative charges (several 1012 /cm2), the programming window isn´t closed after 107 write/erase (W/E) cycles
Keywords :
alumina; high-k dielectric thin films; random-access storage; write-once storage; Al2O3; floating-gate memories degradation; high-k dielectric; high-k tunnel oxide; nonvolatile memories; write/erase cycles; Aluminum oxide; Capacitors; Degradation; Dielectric substrates; Electron traps; Flash memory; High K dielectric materials; High-K gate dielectrics; Nonvolatile memory; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0301-4
DOI :
10.1109/ESSDER.2006.307684
