DocumentCode :
349394
Title :
Low threshold current, high efficiency 1.3 μm wavelength InGaAsN-GaAs based quantum well lasers
Author :
Gokhale, Milind R. ; Wei, Jian ; Studenkov, Pavel ; Forrest, Stephen R.
Author_Institution :
Center for Photonics & Optoelectron. Mater., Princeton Univ., NJ, USA
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
366
Abstract :
We report continuous wave (CW) operation for InGaAsN lasers up to 1.32 μm. Also record low threshold current density JTH=2.7 kA/cm2 (CW) at λ=1.3 μm, and record high output powers of 300 mW are demonstrated for nitrogen-based narrow ridge lasers
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser transitions; quantum well lasers; 1.3 mum; 300 mW; CW operation; InGaAsN-GaAs; InGaAsN-GaAs based quantum well lasers; high efficiency; high output powers; low threshold current; low threshold current density; nitrogen-based narrow ridge lasers; Mars; Optical pulses; Power generation; Power lasers; Quantum well lasers; Temperature; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-5634-9
Type :
conf
DOI :
10.1109/LEOS.1999.813635
Filename :
813635
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=349394
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