Title :
Progress in AlGaInP strained layer quantum well semiconductor lasers
Author_Institution :
Philips Optoelectron. Centre, Eindhoven, Netherlands
fDate :
31 Oct-3 Nov 1994
Abstract :
Visible light emitting semiconductor lasers have become increasingly attractive as light sources in various applications such as data storage, bar-code readers, laser-printers and solid laser pumping. This article reviews the recent progress of AlGaInP semiconductor lasers emitting in the 630 nm band. Significant improvement of the performance of the lasers over the last several years has been obtained by the replacement of the Ga0.5In0.5P bulk layer by Ga xIn1-xP strained quantum well layers in the active region
Keywords :
quantum well lasers; 630 nm; AlGaInP; strained quantum well; visible light emitting semiconductor lasers; Capacitive sensors; Etching; Photonic band gap; Power generation; Pump lasers; Quantum well lasers; Semiconductor lasers; Solid lasers; Threshold current; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.587019
