Title :
Comparison of GaInNAs/GaAs and strain-compensated InGaAs/GaAsP quantum wells for 1200-1300 nm diode lasers
Author :
Hetterich, M. ; Dawson, M.D. ; Egorov, A.Yu. ; Bernklau, D. ; Riechert, H. ; Bland, S.W. ; Davies, J.I. ; Geen, M.D.
Author_Institution :
Inst. of Photonics, Strathclyde Univ., Glasgow, UK
Abstract :
We investigate the optical properties (photoluminescence and photoluminescence excitation spectra) of GaInNAs/GaAs quantum wells and discuss problems caused by the presence of nitrogen in the wells. The use of InGaAs(N)/GaAsP strain-balanced structures is suggested to improve device characteristics through the reduction of the nitrogen amount required to achieve 1.3 μm emission. Especially, we demonstrate that 1.2 μm emission can already be achieved in InGaAs/GaAsP structures without any nitrogen
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; photoluminescence; quantum well lasers; semiconductor quantum wells; 1200 to 1300 nm; 1200-1300 nm diode lasers; GaInNAs-GaAs; GaInNAs/GaAs quantum wells; InGaAs(N)/GaAsP strain-balanced structures; InGaAs-GaAsP; InGaAsN-GaAsP; device characteristics; optical properties; photoluminescence; photoluminescence excitation spectra; strain-compensated InGaAs/GaAsP quantum wells; Diode lasers; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Nitrogen; Optical fiber communication; Photonics; Plasma temperature; Quantum well devices; Vertical cavity surface emitting lasers;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.813636
