Title :
Influence of the amount of InAs on InAs quantum dots on thin GaAs tensile-strained layer on (001) InP substrate
Author :
Du, Guotong ; Wang, Xinqiang ; Li, Mingtao ; Jin, Zhi ; Yin, Jingzhi ; Li, Zhengting ; Liu, Shiyong ; Yang, Shuren
Author_Institution :
State Key Lab. on Integrated Optoelectron., Jilin Univ., Changchun, China
Abstract :
We study the behavior of InAs QDs on thin tensile-strained GaAs layer with different amount of InAs. The samples are grown by LP-MOCVD using TMIn, TMGa, pure AsH3 and 10% PH3 as precursors. The InP buffer layer is grown at 600 °C after the thermal etching, which is performed at 650 °C under the protection of PH3. Then about 3 nm GaAs tensile-strained layers are grown at 500 °C. Finally, 2ML InAs for S1, 4ML for S2, 6ML for S3, and 8ML for S4, are deposited at the growth rate of 0.3 ML/s. We use AFM to study the surface morphology of samples
Keywords :
III-V semiconductors; MOCVD; atomic force microscopy; gallium arsenide; indium compounds; semiconductor growth; semiconductor quantum dots; surface structure; (001) InP substrate; 3 nm; 500 degC; 600 degC; 650 degC; AFM; AsH3; InAs quantum dots; InAs-GaAs; InP; LP-MOCVD; PH3; growth rate; precursors; surface morphology; thermal etching; thin GaAs tensile-strained layer; Gallium arsenide; Indium phosphide; Integrated optics; Integrated optoelectronics; Laboratories; Optical buffering; Quantum dots; Shape; Surface morphology; US Department of Transportation;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.813637
