Title :
Scaling aspects of microjoints for 3D chip interconnects
Author :
Munding, A. ; Kaiser, A. ; Benkart, P. ; Kohn, E. ; Heittmann, A. ; Hübner, H. ; Ramacher, U.
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ.
Abstract :
Scaling of microjoints in 3-dimensional chip stacks is proposed by means of kinetic control. Therefore, phase growth in the copper/tin system in presence of various metal barriers at the interface is evaluated. Promising results have been obtained by using layers of Ti, Ta, Ti:W or combilayers thereof in a thickness range of 20 to 50 nm. The lack of wetting ability observed in some cases could be overcome by thermal pretreatment in order to promote phase nucleation before tin melting
Keywords :
copper alloys; integrated circuit interconnections; joining processes; melting; nucleation; tantalum alloys; tin alloys; titanium alloys; tungsten alloys; wetting; 20 to 50 nm; 3D chip interconnects; Cu-Sn; Ta; Ti:W; melting; metal barriers; microjoints; phase nucleation; scaling aspects; Bonding; Electron devices; Geometry; Integrated circuit interconnections; Intermetallic; Kinetic theory; Soldering; Solids; Temperature; Tin;
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0301-4
DOI :
10.1109/ESSDER.2006.307688
