DocumentCode :
3494032
Title :
Power trench MOSFETs with very low specific on-resistance for 25V applications
Author :
Goarin, Pierre ; van Dalen, R. ; Koops, Gerhard ; Le Cam, C.
Author_Institution :
Philips Res. Leuven
fYear :
2006
fDate :
19-21 Sept. 2006
Firstpage :
274
Lastpage :
277
Abstract :
In this paper, the authors present an investigation into the benefits DUV lithography for the manufacturing of trench MOSFETs and its impact on device performance. The authors discuss experimental results for devices with a pitch size down to 0.6 mum fabricated with an unconventional implant topology and a simplified manufacturing scheme. The fabricated trench MOSFETs are benchmarked against previously published trench MOS technologies by de-embedding the parasitic substrate resistance, revealing a record-low specific on-resistance of 5.3mOmega-mm2 at a breakdown voltage of 30V(Vgs = 10V)
Keywords :
electric breakdown; ion implantation; power MOSFET; ultraviolet lithography; 0.6 micron; 25 V; 30 V; DUV lithography; breakdown voltage; de-embedding; implant topology; parasitic substrate resistance; power trench MOSFET; Doping; Etching; Immune system; Implants; Lithography; MOSFETs; Manufacturing processes; Pulp manufacturing; Silicon; Topology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
ISSN :
1930-8876
Print_ISBN :
1-4244-0301-4
Type :
conf
DOI :
10.1109/ESSDER.2006.307691
Filename :
4099909
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3494032
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