Title :
Bi2(Zn2/3-x/3Nb4/3-2x/3Tix)O7 ceramics - A high permittivity microwave dielectrics for electronics application
Author :
Jacob, Mohan V. ; Sudheendran, K. ; Raju, K.C.James ; Mazierska, Janina
Author_Institution :
Electron. Mater. Res. Lab., James Cook Univ., Townsville, QLD
Abstract :
High-K materials are needed for many microwave applications. In this paper microwave properties of Bi2Zn2/3-x/3Nb4/3-2x/3TixO7 ceramics with x of 0, 0.2 and 0.4 are presented. Ceramics samples were prepared by solid state reaction from respective high purity oxide powders. Dielectric microwave properties of synthesised materials were measured at 3 GHz in a wide range of temperatures using Dielectric Post (DP) resonator technique. The high dielectric permittivity together with low sintering temperature make M-BNZ an attractive candidate for Low Temperature Co-fired Ceramics for charge storage applications in various electronics circuits and microwave systems.
Keywords :
bismuth compounds; ceramics; dielectric materials; firing (materials); microwave materials; permittivity; powder technology; sintering; Bi2(ZnO0.67-0.33xNbO1.33-0.67xTix)O7; charge storage applications; dielectric post resonator technique; electronics application; frequency 3 GHz; high permittivity microwave dielectrics; low temperature cofired ceramics; oxide powders; sintering temperature; solid state reaction; Bismuth; Ceramics; High K dielectric materials; High-K gate dielectrics; Microwave theory and techniques; Niobium; Powders; Solid state circuits; Temperature; Zinc;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4958693
