DocumentCode
3494147
Title
Schottky Tunneling Source MOSFET Design for Mixed Mode and Analog Applications
Author
Jhaveri, R. ; Woo, J.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA
fYear
2006
fDate
19-21 Sept. 2006
Firstpage
295
Lastpage
298
Abstract
A novel asymmetric Schottky tunneling source MOSFET is proposed in this paper. The main feature of this device is the concept of gate controlled Schottky barrier tunneling at the source. The STS MOSFET was fabricated using conventional processes combined with present NiSi technology. The device shows excellent short channel immunity, compared to conventional SOI MOSFETs. This improves the scalability of the device as also makes it an attractive candidate for analog operations
Keywords
MOSFET; Schottky barriers; mixed analogue-digital integrated circuits; nickel alloys; silicon alloys; silicon-on-insulator; tunnelling; MOSFET design; NiSi; Schottky barrier tunneling; Schottky tunneling source; analog applications; analog operations; gate control; mixed mode application; Dielectric devices; Dielectric materials; MOSFET circuits; Schottky barriers; Semiconductor device doping; Silicides; Sociotechnical systems; Thickness control; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location
Montreux
ISSN
1930-8876
Print_ISBN
1-4244-0301-4
Type
conf
DOI
10.1109/ESSDER.2006.307696
Filename
4099914
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