Title :
Schottky Tunneling Source MOSFET Design for Mixed Mode and Analog Applications
Author :
Jhaveri, R. ; Woo, J.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA
Abstract :
A novel asymmetric Schottky tunneling source MOSFET is proposed in this paper. The main feature of this device is the concept of gate controlled Schottky barrier tunneling at the source. The STS MOSFET was fabricated using conventional processes combined with present NiSi technology. The device shows excellent short channel immunity, compared to conventional SOI MOSFETs. This improves the scalability of the device as also makes it an attractive candidate for analog operations
Keywords :
MOSFET; Schottky barriers; mixed analogue-digital integrated circuits; nickel alloys; silicon alloys; silicon-on-insulator; tunnelling; MOSFET design; NiSi; Schottky barrier tunneling; Schottky tunneling source; analog applications; analog operations; gate control; mixed mode application; Dielectric devices; Dielectric materials; MOSFET circuits; Schottky barriers; Semiconductor device doping; Silicides; Sociotechnical systems; Thickness control; Tunneling; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0301-4
DOI :
10.1109/ESSDER.2006.307696
