DocumentCode
349416
Title
Defect production and evolution during and after ion implantation studied by a combination of time-ordered BCA and MD simulations
Author
Posselt, Matthias
Author_Institution
Inst. of Ion Beam Phys. & Mater. Res., Forschungszentrum Rossendorf, Dresden, Germany
Volume
2
fYear
1999
fDate
36495
Firstpage
678
Abstract
A novel method is applied to investigate the as-implanted defect structure formed during keV implantation into Si. It uses a combination of time-ordered computer simulations based on the binary collision approximation (BCA) and classical molecular dynamics (MD) simulations. The as-implanted damage created in 30 keV P+, 15 keV As+ , and 15 keV B+ implants is analyzed and depth profiles of different defect species are given
Keywords
crystal defects; doping profiles; elemental semiconductors; impurity distribution; ion implantation; molecular dynamics method; semiconductor doping; silicon; 15 keV; 30 keV; as-implanted defect structure; binary collision approximation; classical molecular dynamics; defect production; evolution; ion implantation; keV implantation into Si; Computational modeling; Computer simulation; Implants; Ion beams; Ion implantation; Lattices; Physics; Production; Silicon; Slabs;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1998.813757
Filename
813757
Link To Document