Title :
Defect production and evolution during and after ion implantation studied by a combination of time-ordered BCA and MD simulations
Author :
Posselt, Matthias
Author_Institution :
Inst. of Ion Beam Phys. & Mater. Res., Forschungszentrum Rossendorf, Dresden, Germany
Abstract :
A novel method is applied to investigate the as-implanted defect structure formed during keV implantation into Si. It uses a combination of time-ordered computer simulations based on the binary collision approximation (BCA) and classical molecular dynamics (MD) simulations. The as-implanted damage created in 30 keV P+, 15 keV As+ , and 15 keV B+ implants is analyzed and depth profiles of different defect species are given
Keywords :
crystal defects; doping profiles; elemental semiconductors; impurity distribution; ion implantation; molecular dynamics method; semiconductor doping; silicon; 15 keV; 30 keV; as-implanted defect structure; binary collision approximation; classical molecular dynamics; defect production; evolution; ion implantation; keV implantation into Si; Computational modeling; Computer simulation; Implants; Ion beams; Ion implantation; Lattices; Physics; Production; Silicon; Slabs;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813757
