Title :
High-frequency characteristics of a quantum well diode
Author :
Ershov, M. ; Ryzhii, V. ; Saito, K.
Author_Institution :
Dept. of Comput. Hardware, Univ. of Aizu, Japan
Abstract :
High-frequency characteristics of a quantum well (QW) diode with thermionic electron transport are reported. The frequency-dependent admittance of the QW diode is obtained using a rigorous self-consistent small-signal analysis. The frequency dependencies of the QW diode capacitance and conductance are governed by a characteristic time of the recharging of the QW, which depends strongly on temperature and device structural parameters. Experimental data on conductance and capacitance of the QW diode as functions of temperature and frequency can be used to extract the parameters of the QW, such as QW recombination velocity and ionization energy
Keywords :
capacitance; electric admittance; electron-hole recombination; semiconductor device models; semiconductor diodes; semiconductor quantum wells; space-charge-limited conduction; QW recharging; analytical model; capacitance; characteristic time; conductance; device structural parameters; frequency-dependent admittance; high-frequency characteristics; ionization energy; n+-i-n+ diode; quantum well diode; recombination velocity; self-consistent small-signal analysis; space charge limited currents; temperature dependence; thermionic electron transport; Admittance; Data mining; Diodes; Electrons; Frequency; Ionization; Quantum capacitance; Radiative recombination; Structural engineering; Temperature dependence;
Conference_Titel :
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location :
Penang
Print_ISBN :
0-7803-3388-8
DOI :
10.1109/SMELEC.1996.616473
