Characterisation of ultra-shallow junctions using advanced SIMS, SRP and HRTEM techniques

Author

Murrell, Adrian J. ; Collart, Erik J H ; Foad, Majeed A. ; de Cock, Gaél ; Dowsett, Mark ; Elliner, David ; Wang, T-Sheng ; Cullis, Tony

Author_Institution

Implant Div., Appl. Mater., Horsham, UK

Volume

2

fYear

1999

fDate

36495

Firstpage

688

Abstract

B+/1 keV implants have been studied using SIMS, looking in detail at the as-implanted depth profile, to distinguish the true dopant distribution from measurement artefacts. Different SIMS machines and ion energies have been compared, and wafer pre-processing before analysis used to examine the low concentration profile tail. Annealed samples have also been studied, and high depth resolution analysis carried out of the near surface fine structure. The data has been compared with SRP and HRTEM, and used to assign peaks and discontinuities in the profile to dopant states and interfaces

Keywords

doping profiles; impurity distribution; interface structure; ion implantation; semiconductor doping; surface composition; HRTEM; SIMS; as-implanted depth profile; dopant states; high depth resolution analysis; interfaces; ion energies; low concentration profile tail; near surface fine structure; spreading resistance profilometry; ultra-shallow junctions; wafer pre-processing; Annealing; Electronic mail; Electrons; Energy resolution; Foundries; Implants; Instruments; Rough surfaces; Surface roughness; Tail;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813760

Filename

813760