Title :
3-dimensional implantation profiles: The spatial distribution of Nd in Si
Author :
Fink, D. ; Müller, M. ; Nakagawa, S.T. ; Hirata, K. ; Shi, Borong ; Ming, Wang Ke
Author_Institution :
Hahn-Meitner-Inst., Berlin, Germany
Abstract :
Transversal components in ion implantation are available theoretically by the “TRIM” code, and experimentally by a modified tomographic reconstruction from 1-dimensional implantation distributions in various directions. Apart from many cases which reconfirm the 3D-TRIM predictions nicely, we found systems with pronounced deviations in 1 or 3 directions, due to either thermal or radiation-enhanced 3D-diffusion. A new code to treat this 3D post-implantational mobility is illustrated for the example “300 keV Nd+ in Si”. Diffusional changes influence the ratio of lateral to transversal stragglings
Keywords :
doping profiles; elemental semiconductors; ion implantation; neodymium; semiconductor doping; silicon; 1-dimensional implantation distributions; 3-dimensional implantation profiles; 300 keV; 3D post-implantational mobility; Nd spatial distribution; Si:Nd; TRIM code; ion implantation; lateral stragglings; modified tomographic reconstruction; radiation-enhanced 3D-diffusion; thermal-enhanced 3D-diffusion; transversal components; transversal stragglings; Anisotropic magnetoresistance; Chemicals; History; Ion implantation; Neodymium; Physics; Predictive models; Shape; Temperature; Tomography;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813765
