DocumentCode
349425
Title
Low energy (0.25-10 keV) 11B+ ion implantation damage characterisation using Rutherford backscattering spectrometry
Author
Collart, E.J.H. ; Heijdra, M. ; Weemers, K. ; Tamminga, Y. ; van Berkum, J.G.M. ; Verheijen, M.A.
Author_Institution
Implant Div., Appl. Mater., Horsham, UK
Volume
2
fYear
1999
fDate
36495
Firstpage
712
Abstract
It is well established that ion implantation damage in the form of excess Si-interstitials is the main driving force behind transient enhanced diffusion or TED of boron. An accurate measurement of the amount and distribution of these displaced Si atoms, both as-implanted and after anneal, is crucial to understanding the diffusion mechanisms involved. Channelling Rutherford backscattering spectrometry was used to measure damage from boron implants between 250 eV and 10 keV for doses between 5×1013 cm-2 and 8×1015 cm-2. As-implanted damage is compared with damage after rapid thermal annealing for 10 s between 700°C and 1200°C. These results were complemented with high resolution electron transmission microscopy
Keywords
Rutherford backscattering; boron; channelling; diffusion; elemental semiconductors; interstitials; ion beam effects; ion implantation; rapid thermal annealing; semiconductor doping; silicon; 250 eV to 10 keV; B TED; Rutherford backscattering spectrometry; Si:B; as-implanted damage; channelling; diffusion mechanisms; displaced Si atoms; excess Si-interstitials; high resolution electron transmission microscopy; low energy 11B+ ion implantation damage characterisation; rapid thermal annealing; transient enhanced diffusion; Atomic measurements; Backscatter; Boron; Energy resolution; Helium; Implants; Ion implantation; Measurement standards; Rapid thermal annealing; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1998.813766
Filename
813766
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