DocumentCode
349432
Title
Formation of large-area TiO2 thin-films in electron cyclotron resonance sheet plasma and their characterization
Author
Morishita, N. ; Ishii, S. ; Kato, Y. ; Tani, F. ; Koizumi, Yuki ; Sunagawa, M.
Author_Institution
Dept. of Electron. & Inf., Toyama Univ., Japan
Volume
2
fYear
1999
fDate
36495
Firstpage
752
Abstract
Uniform, large-area TiO2 thin films are formed by reactive sputtering deposition in an electron cyclotron resonance (ECR) sheet plasma. The plasma source consists of a pair of long permanent magnets and a slot antenna. The antenna is set up between magnets whose N poles face each other. The generated plasma are uniform in one direction. To make the thin-films uniform in large area, two triangular targets are adopted and substrates are turned at two different angles with respect to the targets. The target form and substrate angle are determined by simulation and experiment. The thin-films are characterized with a profilometer and an X-ray diffractometer. The films of TiO2, especially rutile having high refractive index, are useful for optical coating. The generated films are of anatase that has refractive index of 2.5. Crystallization is improved by controlling the electric potential of the substrates and by annealing as well
Keywords
annealing; crystal structure; plasma deposition; refractive index; semiconductor growth; semiconductor materials; semiconductor thin films; sputter deposition; surface topography; titanium compounds; ECR sheet plasma; TiO2; X-ray diffraction; anatase; annealing; crystallization; electric potential; electron cyclotron resonance sheet plasma; high refractive index; large-area TiO2 thin-films; optical coating; plasma source; reactive sputtering deposition; rutile; slot antenna; triangular targets; Cyclotrons; Electrons; Optical films; Permanent magnets; Plasma sources; Refractive index; Resonance; Sputtering; Substrates; Thin films;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1998.813776
Filename
813776
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