Title :
Range studies of aluminum, boron, and nitrogen implants in 4H-SiC
Author :
Stief, R. ; Lucassen, M. ; Schork, R. ; Rysse, H. ; Holzlein, K.-H. ; Rupp, R. ; Stephani, D.
Author_Institution :
Fraunhofer Inst. fur Integrierte Schaltungen, Erlangen, Germany
Abstract :
Ion implantation is the only suitable method for selective area doping of silicon carbide because of the small diffusivity of impurities. For device processing, knowledge of depth and shape of impurity profiles is crucial. In this study, aluminum, boron, and nitrogen ions were implanted into 4H-SiC within a wide energy range of 10-400 keV. The depth distributions were analyzed by both secondary ion mass spectrometry and an optimized fit routine to extract the range parameters. Together with new fit formulas for the range moments a significantly improved simulator for ion profiles is established. A modified electronic stopping power is given for TRIM and RAMM, respectively, to simulate profiles in amorphized hexagonal silicon carbide. The dose dependence of aluminum profiles is investigated as well
Keywords :
aluminium; boron; digital simulation; doping profiles; energy loss of particles; ion implantation; nitrogen; secondary ion mass spectra; semiconductor doping; semiconductor process modelling; silicon compounds; wide band gap semiconductors; 10 to 400 keV; 4H-SiC; RAMM simulation; SiC:Al,B,N; TRIM; aluminum; amorphized hexagonal silicon carbide; boron; depth distributions; diffusivity; dose dependence; electronic stopping power; implants; impurity profiles; ion implantation; ion profiles; nitrogen; optimized fit routine; range studies; secondary ion mass spectrometry; selective area doping; silicon carbide; Aluminum; Boron; Doping; Implants; Impurities; Ion implantation; Mass spectroscopy; Nitrogen; Shape; Silicon carbide;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813778
