DocumentCode
3494348
Title
InGaAs/InP Single Photon Avalanche Diode Design and Characterization
Author
Tosi, Alberto ; Cova, Sergio ; Zappa, Franco ; Itzler, Mark A. ; Ben-Michael, Rafael
Author_Institution
Dipt. di Elettronica e Informazione, Politecnico di Milano
fYear
2006
fDate
19-21 Sept. 2006
Firstpage
335
Lastpage
338
Abstract
Single-photon avalanche diodes (SPAD) for 1550 nm wavelength can have InGaAs/InP structure similar to that of avalanche photodiodes of fiber optic systems, but for optimizing the device structure radically different criteria must be adopted. Such criteria are here discussed and a complete experimental characterization of the fabricated device is reported. Remarkable performance is verified also at moderately low temperature, as achieved with Peltier coolers
Keywords
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; photodetectors; photon counting; 1550 nm; InGaAs-InP; InGaAs/InP single photon avalanche diode; InGaAs/InP structure; Peltier coolers; SPAD; avalanche photodiodes; fiber optic systems; Absorption; Breakdown voltage; Detectors; Electric breakdown; Indium gallium arsenide; Indium phosphide; Light emitting diodes; Optical design; Passivation; Photonic band gap;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location
Montreux
ISSN
1930-8876
Print_ISBN
1-4244-0301-4
Type
conf
DOI
10.1109/ESSDER.2006.307706
Filename
4099924
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