Title :
Modelling parasitic bipolar devices in advanced smart-power technologies
Author :
Leone, A. ; Speciale, N. ; Graffi, S. ; Masetti, G. ; Graziano, V.
Author_Institution :
Dipt. di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy
Abstract :
In this work we present an improvement of bipolar transistor models which can correctly predict the behavior of the reverse current gain. The proposed approach is particularly useful for modelling parasitic devices of the complex multiterminal bipolar and MOS transistors found in advanced smart-power technologies
Keywords :
power integrated circuits; advanced smart-power technologies; bipolar transistor models; multiterminal MOS transistors; multiterminal bipolar transistors; parasitic bipolar devices; reverse current gain; Bipolar transistors; Circuit simulation; Feedback circuits; Integrated circuit modeling; Isolation technology; Low voltage; MOSFETs; Power transistors; Predictive models; Substrates;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3916-9
DOI :
10.1109/BIPOL.1997.647417
