Title :
Computer simulation of decaborane implantation and rapid thermal annealing
Author :
Insepov, Zinetulla ; Aoki, Takaaki ; Matsuo, Jiro ; Yamada, Isao
Author_Institution :
Ion Beam Eng. Exp. Lab., Kyoto Univ., Japan
Abstract :
Molecular dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The implanted B dopant and Si-atomic diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B+ implantation, with the same energy per ion. The calculated B diffusion coefficient has values between 10-12-10-10 cm2 s-1 which agrees well with experimental values obtained for an equilibrium B dopant in Si
Keywords :
Monte Carlo methods; boron; boron compounds; diffusion; elemental semiconductors; impurity distribution; ion implantation; molecular dynamics method; physics computing; rapid thermal annealing; semiconductor doping; silicon; Metropolis Monte-Carlo models; RTA; Si:(B10H14)+; Si:B; Si:B10H14; computer simulation; decaborane implantation; diffusion coefficients; molecular dynamics; rapid thermal annealing; Atomic measurements; Computer simulation; Ion beams; Ion implantation; Predictive models; Rapid thermal annealing; Rapid thermal processing; Semiconductor process modeling; Simulated annealing; Temperature;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813790
