Computer simulation of decaborane implantation and rapid thermal annealing

Author

Insepov, Zinetulla ; Aoki, Takaaki ; Matsuo, Jiro ; Yamada, Isao

Author_Institution

Ion Beam Eng. Exp. Lab., Kyoto Univ., Japan

Volume

2

fYear

1999

fDate

36495

Firstpage

807

Abstract

Molecular dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The implanted B dopant and Si-atomic diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B⁺ implantation, with the same energy per ion. The calculated B diffusion coefficient has values between 10^-12-10^-10 cm² s^-1 which agrees well with experimental values obtained for an equilibrium B dopant in Si

Keywords

Monte Carlo methods; boron; boron compounds; diffusion; elemental semiconductors; impurity distribution; ion implantation; molecular dynamics method; physics computing; rapid thermal annealing; semiconductor doping; silicon; Metropolis Monte-Carlo models; RTA; Si:(B₁₀H₁₄)⁺; Si:B; Si:B₁₀H₁₄; computer simulation; decaborane implantation; diffusion coefficients; molecular dynamics; rapid thermal annealing; Atomic measurements; Computer simulation; Ion beams; Ion implantation; Predictive models; Rapid thermal annealing; Rapid thermal processing; Semiconductor process modeling; Simulated annealing; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813790

Filename

813790