Ion beam processing for silicon-based light emission

Author

Skorupa, Wolfgang

Author_Institution

Inst. for Ion Beam Phys. & Mater. Res, Forschungszentrum Rossendorf e.V., Dresden, Germany

Volume

2

fYear

1999

fDate

36495

Firstpage

827

Abstract

Despite the tremendous effort in optoelectronics using compound semiconductor materials with narrow and wide bandgaps (GaAs, GaN, etc.) the dream is still continuing to use the key material of microelectronics, silicon, for this purpose. In this paper a review of the impact of ion beam processing on the field of silicon-based light emission is made. Er-doping of silicon as well as ion beam synthesis of Si- and Ge-rich thermally grown SiO₂-layers, and β-FeSi ₂ precipitates in single crystalline silicon are addressed as representative approaches in this emerging field

Keywords

elemental semiconductors; erbium; germanium; ion implantation; iron compounds; photoluminescence; reviews; semiconductor doping; silicon; silicon compounds; β-FeSi₂ precipitates; Er-doping; Ge-rich thermally grown SiO₂-layers; Si-rich thermally grown SiO₂-layers; Si:Er; Si:FeSi₂; SiO₂:Ge; ion beam processing; ion beam synthesis; optoelectronics; review; silicon-based light emission; single crystalline silicon; Erbium; Ion beams; Light sources; Luminescence; Microelectronics; Optical modulation; Optical receivers; Semiconductor materials; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813796

Filename

813796