Title :
Blue photoluminescence emission from thermal SiO2 films implanted with carbon
Author :
Yu, Y.H. ; Lei, Y.M. ; Wong, S.P. ; Wilson, I.H. ; Zou, S.C.
Author_Institution :
Inst. of Metall., Acad. Sinica, Shanghai, China
Abstract :
The structures formed after the implantation of carbon in thermal SiO2 and annealing present visible photoluminescence (PL) bands at room temperature. The peak wavelength and intensity of PL bands depend strongly on the temperature of annealing. In contrast, only very weak PL bands are observed after the implantation of argon in thermal SiO2 and similar annealing. IR, Raman, SIMS and HRTEM were also used to characterize the microstructure of the carbon or argon implanted thermal SiO2 films. These observations show that carbon aggregates are probably the origin of blue PL bands
Keywords :
Raman spectra; annealing; argon; carbon; crystal microstructure; infrared spectra; insulating thin films; ion implantation; photoluminescence; secondary ion mass spectra; silicon compounds; spectral line intensity; transmission electron microscopy; 20 C; HRTEM; IR spectra; PL bands; Raman spectra; SIMS; SiO2:C,Ar; annealing; annealing temperature; argon implanted thermal SiO2 films; blue PL bands; blue photoluminescence emission; carbon; carbon aggregates; implantation; intensity; microstructure; peak wavelength; room temperature; thermal SiO2 films; visible photoluminescence; Argon; Carbon dioxide; Ion implantation; Nanoscale devices; Nanostructured materials; Photoluminescence; Rapid thermal annealing; Semiconductor films; Temperature; Wavelength measurement;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813797
