A novel method to suppress transient enhanced diffusion of low energy implanted boron based on reactive plasma etching

Author

Privitera, Vittorio ; Priolo, Francesco ; Mannino, Giovanni ; Napolitani, Enrico ; Carnera, A.

Author_Institution

IMETEM, CNR, Catania, Italy

Volume

2

fYear

1999

fDate

36495

Firstpage

845

Abstract

The effect of plasma processing on the transient enhanced diffusion of implanted boron in silicon is presented. Thermally oxidised silicon wafers were first etched by plasma and subsequently implanted with boron, with energies ranging from 3 to 20 keV and a dose of 1×10¹³/cm². Secondary ion mass spectrometry measurements of the boron profiles in plasma processed samples reveal a strong reduction of the transient diffusion after rapid thermal annealing, with respect to the corresponding not etched samples. The suppression of the transient enhanced diffusion is explained in terms of trapping effects, occurring between the dislocations induced by plasma bombardment and the point defects generated during the implant

Keywords

boron; diffusion; dislocation interactions; doping profiles; elemental semiconductors; ion implantation; point defects; rapid thermal annealing; secondary ion mass spectra; semiconductor doping; silicon; sputter etching; 3 to 20 keV; Si:B; SiO₂; boron profiles; dislocations; dose; low energy implanted boron; plasma bombardment; plasma processing; point defects; rapid thermal annealing; reactive plasma etching; secondary ion mass spectrometry; silicon; thermally oxidised silicon wafers; transient enhanced diffusion; trapping effects; Boron; Etching; Implants; Mass spectroscopy; Plasma applications; Plasma materials processing; Plasma measurements; Rapid thermal annealing; Rapid thermal processing; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813800

Filename

813800