Title :
Peculiarities of implantation of silicon with intensive beams of B + and BF2+ ions
Author :
Troitski, V.Yu. ; Gerasimenko, N.N. ; Verner, I.V.
Author_Institution :
Res. Dev. & Production Center ORION, Moscow, Russia
Abstract :
The comparison of results on implantation of B+ ions and molecular ions BF2+ into silicon at density of ion beam current (j) up to 120 μA cm-2 has been conducted. The investigation of the kinetics of changes in structure of implanted layers, profiles of distribution of introduced impurities and degree of electrical activation of boron atoms showed that only molecular ions stimulate sufficient dynamic processes during irradiation. This dynamic process causes electrical activation of boron and the shift of its distribution profile towards the surface
Keywords :
boron; boron compounds; doping profiles; elemental semiconductors; impurity states; ion implantation; semiconductor doping; silicon; B+; BF2+ ions; Si:B; Si:BF2; distribution profile; dynamic processes; electrical activation; implantation; impurities; intensive beams; ion beam current; kinetics; molecular ions; profiles; silicon; Annealing; Atomic layer deposition; Boron; Crystallization; Electrical resistance measurement; Impurities; Ion beams; Production; Silicon; Temperature measurement;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813801
