Title :
Problems of plasmochemical etching of Si in case of formation 3D structures (Tri-Gate technology of nanotransistors)
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
Abstract :
The main results of plasma etching of silicon in CCl2F2/O2 in the quartz reactor with a teflon covering are considered. The consistent model of plasmochemical etching of silicon in CCl2F2/O2 plasma in the conditions of the active delivery chemically the active particles at the expense of teflon etching is constructed. Depth etching of silicon to 180 microns in 30 minutes is carried out.
Keywords :
nanoelectronics; sputter etching; transistors; 3D structure formation; CCl2F2-O2; Si; active delivery; nanotransistors; plasmachemical etching; plasmochemical etching; quartz reactor; teflon covering; teflon etching; time 30 min; tri-gate technology; Nanoelectronics; plasmochemical etching; silicon; teflon covering;
Conference_Titel :
Actual Problems of Electronics Instrument Engineering (APEIE), 2012 11th International Conference on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4673-2842-5
DOI :
10.1109/APEIE.2012.6629137
