• DocumentCode
    3494550
  • Title

    Problems of plasmochemical etching of Si in case of formation 3D structures (Tri-Gate technology of nanotransistors)

  • Author

    Bogomolov, B.K.

  • Author_Institution
    Novosibirsk State Tech. Univ., Novosibirsk, Russia
  • fYear
    2012
  • fDate
    2-4 Oct. 2012
  • Firstpage
    15
  • Lastpage
    20
  • Abstract
    The main results of plasma etching of silicon in CCl2F2/O2 in the quartz reactor with a teflon covering are considered. The consistent model of plasmochemical etching of silicon in CCl2F2/O2 plasma in the conditions of the active delivery chemically the active particles at the expense of teflon etching is constructed. Depth etching of silicon to 180 microns in 30 minutes is carried out.
  • Keywords
    nanoelectronics; sputter etching; transistors; 3D structure formation; CCl2F2-O2; Si; active delivery; nanotransistors; plasmachemical etching; plasmochemical etching; quartz reactor; teflon covering; teflon etching; time 30 min; tri-gate technology; Nanoelectronics; plasmochemical etching; silicon; teflon covering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Actual Problems of Electronics Instrument Engineering (APEIE), 2012 11th International Conference on
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    978-1-4673-2842-5
  • Type

    conf

  • DOI
    10.1109/APEIE.2012.6629137
  • Filename
    6629137
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3494550