Title :
A distributed regional modeling approach for power bipolar devices in circuit simulation
Author :
Berraies, M.O. ; Leturcq, Ph.
Author_Institution :
CNRS, Toulouse, France
Abstract :
An alternative strategy to circuit oriented power device modelling is presented. It consists on a regional view to modelling and a new partition of the model library. The latter is made up of a limited number of submodels associated with well-identified regions of semiconductor structures. By linking these building blocks, one can obtain an homogeneous set of power semiconductor device models
Keywords :
circuit analysis computing; power semiconductor devices; semiconductor device models; circuit oriented power device modelling; circuit simulation; distributed regional modeling; model library partition; power bipolar devices; power semiconductor device models; semiconductor structures; submodels; Charge carrier processes; Circuit simulation; Circuits; Electronic mail; Insulated gate bipolar transistors; Joining processes; Libraries; Physics; Power electronics; Power semiconductor devices; Radiative recombination;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3916-9
DOI :
10.1109/BIPOL.1997.647418
