DocumentCode
3494610
Title
A distributed regional modeling approach for power bipolar devices in circuit simulation
Author
Berraies, M.O. ; Leturcq, Ph.
Author_Institution
CNRS, Toulouse, France
fYear
1997
fDate
28-30 Sep 1997
Firstpage
131
Lastpage
134
Abstract
An alternative strategy to circuit oriented power device modelling is presented. It consists on a regional view to modelling and a new partition of the model library. The latter is made up of a limited number of submodels associated with well-identified regions of semiconductor structures. By linking these building blocks, one can obtain an homogeneous set of power semiconductor device models
Keywords
circuit analysis computing; power semiconductor devices; semiconductor device models; circuit oriented power device modelling; circuit simulation; distributed regional modeling; model library partition; power bipolar devices; power semiconductor device models; semiconductor structures; submodels; Charge carrier processes; Circuit simulation; Circuits; Electronic mail; Insulated gate bipolar transistors; Joining processes; Libraries; Physics; Power electronics; Power semiconductor devices; Radiative recombination;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-3916-9
Type
conf
DOI
10.1109/BIPOL.1997.647418
Filename
647418
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