Title :
Investigation of the high temperature stability of TiN-Al2O3-TiN capacitors for sub 50nm deep trench DRAM
Author :
Böscke, T. ; Kudelka, S. ; Sänger, A. ; Müller, J. ; Krautschneider, W.
Abstract :
This paper deals with the investigation of mechanisms leading to a degradation of the electrical properties of titanium nitride - aluminum oxide - titanium nitride capacitors at high temperatures. Several degradation mechanisms could be identified by thorough electrical and physical characterization. The findings will serve as a future guide to build thermally stable MIM capacitors
Keywords :
DRAM chips; MIM devices; aluminium compounds; capacitors; thermal stability; titanium compounds; 50 nm; DRAM; TiN-Al2O3-TiN; high temperature stability; thermally stable MIM capacitors; Aluminum oxide; Annealing; Dielectrics; Electrodes; Leakage current; MIM capacitors; Random access memory; Stability; Temperature; Tin;
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0301-4
DOI :
10.1109/ESSDER.2006.307720
