Title :
Contribution of self heating to intermodulation in FETs
Author :
Rathmell, James G. ; Parker, Anthony E.
Author_Institution :
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
Abstract :
Self heating gives microwave FETs a temperature response to power dissipation. This is shown to be significant at high-frequency signal rates, even though the apparent time constant of heating is a few kilohertz. Self heating causes variation in intermodulation with frequency spacing and the extent of this variation is linked to bias. The frequency response of the heating process can be characterized from third-order intermodulation versus frequency spacing.
Keywords :
frequency response; intermodulation; microwave field effect transistors; semiconductor device models; field effect transistors; frequency spacing; heating process; high frequency signal rates; microwave FETs; power dissipation; self heating; temperature response; third order intermodulation; Dispersion; Electromagnetic heating; Frequency response; Heat engines; Isothermal processes; Microwave FETs; Power dissipation; Signal processing; Temperature; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1339085
