DocumentCode
3494679
Title
Contribution of self heating to intermodulation in FETs
Author
Rathmell, James G. ; Parker, Anthony E.
Author_Institution
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
Volume
2
fYear
2004
fDate
6-11 June 2004
Firstpage
803
Abstract
Self heating gives microwave FETs a temperature response to power dissipation. This is shown to be significant at high-frequency signal rates, even though the apparent time constant of heating is a few kilohertz. Self heating causes variation in intermodulation with frequency spacing and the extent of this variation is linked to bias. The frequency response of the heating process can be characterized from third-order intermodulation versus frequency spacing.
Keywords
frequency response; intermodulation; microwave field effect transistors; semiconductor device models; field effect transistors; frequency spacing; heating process; high frequency signal rates; microwave FETs; power dissipation; self heating; temperature response; third order intermodulation; Dispersion; Electromagnetic heating; Frequency response; Heat engines; Isothermal processes; Microwave FETs; Power dissipation; Signal processing; Temperature; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2004 IEEE MTT-S International
ISSN
0149-645X
Print_ISBN
0-7803-8331-1
Type
conf
DOI
10.1109/MWSYM.2004.1339085
Filename
1339085
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