Title :
Detection of Single-Electron Transfer Events and Capacitance Measurements in Submicron Floating-Gate Memory Cells
Author :
Tkachev, Yuri ; Kotov, Alexander
Author_Institution :
Silicon Storage Technol. Inc., Sunnyvale, CA
Abstract :
A simple technique for monitoring floating gate (FG) charge gain/loss with elementary charge accuracy is proposed. The technique does not require nanoscale FG or low temperature and can be applied to virtually any submicron FG memory cell. The potential applications include precise capacitance measurements, as well as analysis of program, erase, disturb and data retention characteristics of FG memory cells in extremely low range of FG current (down to 10-23A and below)
Keywords :
capacitance measurement; semiconductor storage; single electron transistors; capacitance measurements; data retention characteristics; single-electron transfer events detection; submicron floating-gate memory cells; Capacitance measurement; Charge measurement; Current measurement; Electrons; Event detection; Monitoring; Nonvolatile memory; Stress; Temperature distribution; Time measurement;
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0301-4
DOI :
10.1109/ESSDER.2006.307725
