Reliability of Recess-channel Gate Cell Transistor under Gate-Induced Drain Leakage Stress and Positive Bias Fowler-Nordheim Gate Stress

The reliability of recess-channel gate (RG) cell transistor under positive bias Fowler-Nordheim (F-N) gate stress and gate-induced drain leakage (GIDL) stress was investigated. RG cell transistor was found to be more degraded by the F-N gate stress than the GIDL stress due to the gate oxide thickness profile of the RG structure. The oxide thickness along the sidewall plane is a critical factor determining the reliability characteristics of RG cell transistor