Title :
Fast Kerf- and Tester-Compatible Method for RC Characterization of DRAM Memory Cells
Author :
Sauerbrey, Jens ; Holzapfl, Birgit ; Unertl, Marcus ; Haywood, Theo ; Wohlrab, Erdmute ; Frey, Alexander ; Thewes, Roland
Author_Institution :
Infineon Technol. AG, Neubiberg
Abstract :
A kerf and tester compatible test structure is presented which allows fast and reliable evaluation of resistance and capacitance values of DRAM memory cells. The circuit is realized in a 70nm DRAM process, consumes an area of 795mum times 76mum, and requires six interconnect pads. Using standard electrical measurement equipment, the characterization method reveals resistance and capacitance based on DC current measurements and using ab-initio analytical expressions. Measured results from different lots are shown and compared to the simulated circuit behavior
Keywords :
DRAM chips; RC circuits; electric current measurement; 70 nm; 76 micron; 795 micron; DC current measurements; DRAM memory cells; RC characterization; electrical measurement equipment; interconnect pads; kerf compatible test structure; tester compatible test structure; Capacitance measurement; Circuit simulation; Circuit testing; Current measurement; Electric resistance; Electric variables measurement; Electrical resistance measurement; Integrated circuit interconnections; Measurement standards; Random access memory;
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0301-4
DOI :
10.1109/ESSDER.2006.307727
