Non-Linear Gate Length Dependence of On-Current in Si-Nanowire FETs

Author

Weber, W.M. ; Graham, A.P. ; Duesberg, G.S. ; Liebau, M. ; Cheze, C. ; Geelhaar, L. ; Unger, E. ; Pamler, W. ; Hoenlein, W. ; Riechert, H. ; Kreupl, F. ; Lugli, P.

Author_Institution

Qimonda Dresden GmbH & Co.

fYear

2006

fDate

Sept. 2006

Firstpage

423

Lastpage

426

Abstract

An extensive gate-length (L_G) dependent electrical characterization of silicon nanowire (NW) field effect transistors (FET) is presented here. Catalytically-grown and nominally undoped Si-NWs were integrated as the active region of FETs, upon which fully silicided Schottky source and drain contacts were fabricated. The length of the active region was shortened by a desired value, through the lateral self-aligned formation of nickel silicide source- and drain-segments. All Si-NW FETs consisting of a single Si-NW with diameters between 10 and 30 nm display p-type behaviour and on/off-current ratios of up to 10 ⁷. Devices with L_Gs below 1 mum and 21 nm NW-diameters all show the same on currents around 1 muA at 1 V drain-source biases. For L_G > 1 mum the on-current decreases exponentially with increasing L_G

Keywords

Schottky barriers; elemental semiconductors; field effect transistors; nanowires; silicon; 1 V; 10 nm; 30 nm; Si; Si-nanowire FET; drain contacts; electrical characterization; field effect transistors; fully silicided Schottky source; lateral self-aligned formation; nickel silicide drain-segments; nickel silicide source-segments; nonlinear gate length dependence; p-type behaviour; silicon nanowire; Annealing; FETs; Fabrication; Lithography; Nanoelectronics; Nickel; Semiconductivity; Silicides; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Conference_Location

Montreux

ISSN

1930-8876

Print_ISBN

1-4244-0301-4

Type

conf

DOI

10.1109/ESSDER.2006.307728

Filename

4099946