Title :
Precise, fast and accurate depth profiling of sub-keV to MeV B implants in Si
Author :
Pate, S.B. ; Sears, A. ; Maul, J.L.
Author_Institution :
Atomika Instrum. GmbH, Munich, Germany
Abstract :
Low and high energy boron implanted silicon samples have been analyzed using the Atomika 4500 SIMS tool. High precision of dose measurement for keV and sub-keV boron implants is shown. Methods of obtaining fast and accurate boron profiles are discussed
Keywords :
boron; doping profiles; elemental semiconductors; ion implantation; secondary ion mass spectra; semiconductor doping; silicon; Atomika 4500 SIMS tool; Si:B; depth profiling; sub-keV to MeV B implants; Atomic measurements; Boron; Energy measurement; Implants; Instruments; Ionization; Loss measurement; Silicon; Testing; Velocity measurement;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813836
