Title :
Low temperature single electron characteristics in gate-all-around MOSFETs
Author :
Pott, Vincent ; Bouvet, Didier ; Boucart, Julien ; Tschuor, Lucas ; Moselund, Kirsten E. ; Ionescu, Adrian M.
Author_Institution :
Inst. of Microelectron. & Microsystems, Ecole Polytechnique Federale de Lausanne
Abstract :
This work reports on the fabrication, characterization and modeling of single electron transistor behavior in gate-all-around silicon nanoscale MOS devices. Polysilicon-gated nanowire transistors with triangular cross-sections, ranging from 20 to 250nm are fabricated by an original isotropic etching technique resulting in localized-SOI on bulk-Si wafers. Low temperature (T<20K) characteristics show Coulomb blockade in ID-VD and periodic oscillations in I D-VG. Two modeling approaches are discussed and critically compared to explain the experimental results: (i) orthodox theory of single electron transistor; and (ii) one-dimensional sub-bands formation
Keywords :
Coulomb blockade; MOSFET; elemental semiconductors; nanowires; semiconductor device models; silicon; single electron transistors; 1D subbands formation; 20 to 250 nm; Coulomb blockade; Si; bulk-Si wafers; gate-all-around MOSFET; isotropic etching; localized-SOI; low temperature single electron characteristics; orthodox theory; periodic oscillations; polysilicon-gated nanowire transistors; silicon nanoscale MOS devices; single electron transistor behavior; Etching; Fabrication; MOSFETs; Nanoscale devices; Passivation; Semiconductor device modeling; Silicon; Single electron transistors; Temperature; Wire;
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0301-4
DOI :
10.1109/ESSDER.2006.307729
