Title :
The emitter-controlled thyristor (ECT)-a new MOS gate controlled thyristor
Author :
Zhang, Bo ; Huang, Alex Q.
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
The Forward Biased Safe Operating Area (FBSOA) and the Reverse Biased Safe Operating Area (RBSOA) of the new Emitter-Controlled thyristor (ECT) are studied. The high-voltage current saturation mechanism and the turn-off failure mechanism of the ECT are analyzed. It is demonstrated that the ECT has superior FBSOA and RBSOA compared with the IGBT and other known MOS gated thyristors
Keywords :
MOS-controlled thyristors; failure analysis; semiconductor device models; semiconductor device reliability; FBSOA; HV current saturation mechanism; MOS gate controlled thyristor; RBSOA; emitter-controlled thyristor; forward biased SOA; high-voltage current saturation; reverse biased SOA; safe operating area; turnoff failure mechanism; Anodes; Cathodes; Charge carrier processes; Electrical capacitance tomography; Equivalent circuits; Failure analysis; Insulated gate bipolar transistors; MOSFETs; Thyristors; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3916-9
DOI :
10.1109/BIPOL.1997.647419
