Short-wavelength, light-emitting materials fabricated by Si and N ions coimplantation into SiO2 films

UV-visible photoluminescence (PL) peaking at ~330 nm, ~430 nm, and ~660 nm, respectively, was observed at room temperature from Si- and Nco-implanted thermal SiO₂ films. Si and N ions of three different energies to corresponding doses were respectively used to create over-lapped, flat-topped distributions in the substrates. SIMS analysis demonstrates that the depth profile of the N in the substrates has a good agreement with the simulated result. The PL intensities first increase with the increased annealing temperature and reach a maximum at about 600°C, then decrease rapidly with further increasing the annealing temperature. The microstructural analyses were performed using ESR and FTIR. The PL is suggested to be attributed to N-related defects and/or Si-O based species created by Si and N implantation