DocumentCode
349484
Title
Highly insulated SrTiO3 thin films
Author
Akedo, Kunio ; Fujikawa, Hisayoshi ; Suzuki, Motofumi ; Taga, Yasunori
Author_Institution
Toyota Central Res. & Dev. Labs. Inc., Aichi, Japan
Volume
2
fYear
1999
fDate
36495
Firstpage
970
Abstract
Electrical properties of RF magnetron sputtered SrTiO3 (STO) thin films have been studied in view of application to diminish the influence of electro-magnetic noise to automobile IC. STO films with Ti rich composition (Ti/Sr=1.2) have high breakdown field of Ebd=2 MV/cm and high dielectric constant of εr=140 up to frequency region of 2 GHz. In addition, characterization by TEM observation of STO films thus formed revealed that the films have complex columnar structure, which includes crystal grains and amorphous layers. Electrical properties of STO films obtained in this study can be explained in terms of the coexistence of crystal grains and amorphous layers
Keywords
crystal microstructure; electrical resistivity; ferroelectric materials; ferroelectric thin films; noise; permittivity; sputtered coatings; strontium compounds; 2 GHz; RF magnetron sputtered; SrTiO3; TEM; amorphous layers; complex columnar structure; crystal grains; electrical properties; electro-magnetic noise; high breakdown field; high dielectric constant; highly insulated SrTiO3 thin films; Amorphous magnetic materials; Amorphous materials; Application specific integrated circuits; Automobiles; Dielectric thin films; Insulation; Integrated circuit noise; Magnetic properties; Radio frequency; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1998.813840
Filename
813840
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