• DocumentCode
    349486
  • Title

    Ion implantation into silica fibers and metal wires

  • Author

    Kajiyama, Kenji ; Sekine, Kohei ; Yoneda, Tomoaki ; Shibauchi, Takamasa ; Yamamoto, Masahiro

  • Author_Institution
    Ion Eng. Res. Inst., Osaka, Japan
  • Volume
    2
  • fYear
    1999
  • fDate
    36495
  • Firstpage
    982
  • Abstract
    Boron ions were uniformly implanted into silica fibers, and Cu and Al wires of ~125 μm φ. Implantation energy was 100 keV and nominal dose was 1×1016/cm2. Samples were rotated on their axes for uniform implantation. Boron depth profiles were measured by the Secondary-Ion Mass Spectroscopy and was compared with calculated results. Sample temperature rise during implantation was estimated by thermo-couple measurement and its result was compared with calculated results
  • Keywords
    aluminium; boron; buried layers; copper; doping profiles; ion implantation; secondary ion mass spectra; silicon compounds; 100 keV; Al:B; Cu:B; Secondary-Ion Mass Spectroscopy; SiO2:B; implantation energy; ion implantation; metal wires; silica fibers; thermo-couple measurement; Artificial intelligence; Atomic measurements; Boron; Ion implantation; Medical treatment; Optical fiber communication; Optical fibers; Silicon compounds; Wire; Yarn;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1998.813843
  • Filename
    813843
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=349486