Title :
Ion implantation into silica fibers and metal wires
Author :
Kajiyama, Kenji ; Sekine, Kohei ; Yoneda, Tomoaki ; Shibauchi, Takamasa ; Yamamoto, Masahiro
Author_Institution :
Ion Eng. Res. Inst., Osaka, Japan
Abstract :
Boron ions were uniformly implanted into silica fibers, and Cu and Al wires of ~125 μm φ. Implantation energy was 100 keV and nominal dose was 1×1016/cm2. Samples were rotated on their axes for uniform implantation. Boron depth profiles were measured by the Secondary-Ion Mass Spectroscopy and was compared with calculated results. Sample temperature rise during implantation was estimated by thermo-couple measurement and its result was compared with calculated results
Keywords :
aluminium; boron; buried layers; copper; doping profiles; ion implantation; secondary ion mass spectra; silicon compounds; 100 keV; Al:B; Cu:B; Secondary-Ion Mass Spectroscopy; SiO2:B; implantation energy; ion implantation; metal wires; silica fibers; thermo-couple measurement; Artificial intelligence; Atomic measurements; Boron; Ion implantation; Medical treatment; Optical fiber communication; Optical fibers; Silicon compounds; Wire; Yarn;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813843
