Title :
Formation of vanadium oxide by ion implantation and heat treatment
Author :
Narumi, Kazumasa ; Yamamoto, Shunya ; Miyashita, A. ; Aoki, Yasushi ; Naramoto, Hiroshi
Author_Institution :
Adv. Sci. Res. Center, JAERI, Ibaraki, Japan
Abstract :
Single-crystal sapphire coimplanted with vanadium and oxygen ions and annealed subsequently was analyzed using RBS/channeling and X-ray-diffraction techniques. Behavior of the substrate and implanted vanadium to thermal annealing depends on crystal orientation of the substrate, temperature during the implantation and oxygen fluence relative to that of vanadium. V2O3 and VO2 precipitates were formed in c-axis-oriented sapphire depending on the fluence of oxygen
Keywords :
Rutherford backscattering; X-ray diffraction; annealing; crystal orientation; ion implantation; vanadium compounds; RBS/channeling; V2O3; VO2; VO2 precipitates; X-ray-diffraction techniques; c-axis-oriented sapphire; heat treatment; ion implantation; oxygen fluence; Annealing; Crystalline materials; Crystallography; Heat treatment; Ion implantation; Magnetic materials; Optical scattering; Optical switches; Substrates; Temperature dependence;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813845
