DocumentCode :
3494881
Title :
Piezoelectrically transduced high-Q silica micro resonators
Author :
Zhengzheng Wu ; Peczalski, A. ; Thakar, V.A. ; Zongliang Cao ; Yi Yuan ; Guohong He ; Peterson, Rebecca L. ; Najafi, Khalil ; Rais-Zadeh, Mina
Author_Institution :
Electr. Eng. Dept., Univ. of Michigan, Ann Arbor, MI, USA
fYear :
2013
fDate :
20-24 Jan. 2013
Firstpage :
122
Lastpage :
125
Abstract :
In this paper, we report on high-performance piezoelectric-on-silica micromechanical resonators for integrated timing applications. Fused silica is used as the resonator structural material for its excellent material properties, and thin film aluminum nitride is used as the piezoelectric transduction layer. A silica resonator is demonstrated with a high quality factor (QU~25,841), low motional impedance (Rm ~350 Ω), and good power handling capability. The measured f×Q product of this resonator is the highest amongst reported micromachined silica/fused quartz resonators.
Keywords :
III-V semiconductors; crystal resonators; microfabrication; micromachining; micromechanical resonators; microsensors; piezoelectric transducers; silicon compounds; thin film sensors; wide band gap semiconductors; AlN; SiO2; integrated timing application; low motional impedance; micromachined silica-fused quartz resonator; piezoelectrically transduced high-Q silica micromechanical resonator; power handling capability; resonator structural material; thin film aluminum nitride; Couplings; Micromechanical devices; Oscillators; Resonant frequency; Silicon; Silicon compounds; Vibrations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
Conference_Location :
Taipei
ISSN :
1084-6999
Print_ISBN :
978-1-4673-5654-1
Type :
conf
DOI :
10.1109/MEMSYS.2013.6474192
Filename :
6474192
Link To Document :
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