Suppression of dislocation multiplication inside contact holes

Author

Peng, Y.C. ; Chen, L.J. ; Hsieh, Y.F.

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

2

fYear

1999

fDate

36495

Firstpage

1006

Abstract

Ion implantation into contact holes has been regarded as an effective method to lower the contact resistance in microelectronics devices. However, implantation into contact holes after contact opening usually result in residual defects during post-implantation annealings. In this study, it was found that mask edge defects (MEDs) were formed at the edge area of contact holes of small size (0.5 μm) and high aspect ratio (a/c>4). Nucleation and multiplication of tertiary defects from MEDs were also observed inside contact holes after back-end processing. The dislocations were identified to be Schockley partial dislocations and stair-rod dislocations on inclined (111)Si planes

Keywords

annealing; contact resistance; dislocation multiplication; dislocation nucleation; elemental semiconductors; ion implantation; silicon; 0.5 mum; Schockley partial dislocations; Si; back-end processing; contact holes; contact resistance; dislocation multiplication suppression; effective method; high aspect ratio; inclined (111)Si planes; mask edge defects; microelectronics devices; post-implantation annealings; residual defects; stair-rod dislocations; tertiary defects multiplication; tertiary defects nucleation; Amorphous materials; Annealing; Contact resistance; Doping; Implants; Ion implantation; Materials science and technology; Microelectronics; Shape; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813849

Filename

813849